Статья

A lead-halide perovskite molecular ferroelectric semiconductor

Wei‐Qiang LiaoOrdered Matter Science Research Center, Southeast University, Nanjing 211189, ChinaYi ZhangOrdered Matter Science Research Center, Southeast University, Nanjing 211189, ChinaChun‐Li HuFujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002, ChinaJiang‐Gao MaoFujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002, ChinaHeng‐Yun YeOrdered Matter Science Research Center, Southeast University, Nanjing 211189, ChinaPeng‐Fei LiOrdered Matter Science Research Center, Southeast University, Nanjing 211189, ChinaSongping D. HuangDepartment of Chemistry and Biochemistry, Kent State University, Kent, Ohio 44240, USARen‐Gen Xiong1] Ordered Matter Science Research Center, Southeast University, Nanjing 211189, China [2] Department of Chemistry and Biochemistry, Kent State University, Kent, Ohio 44240, USA

2015en

ABI

Аннотация

Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium)2PbCl4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization Ps=13 μC cm(-2) and a higher Curie temperature Tc=438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics.

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Идентификаторы

DOI: 10.1038/ncomms8338

Цитирования и источники

Цитирований: 4Использованных источников: 0

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