Sensitive short-wavelength infrared photodetection with a quinoidal ultralow band-gap n-type organic semiconductor
Mingqun YangInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaBingyan YinInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaGangjian HuState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130000, P.R. ChinaYunhao CaoInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaShuo LuState Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P.R. ChinaYihui ChenInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaYiyu HeInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaXiye YangBo HuangInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaJunyu LiMolecular Materials and Nanosystems & Institute for Complex Molecular Systems, Eindhoven University of Technology, 5600 MB Eindhoven, the NetherlandsBaoqi WuInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaShuting PangInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaLiang ShenState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130000, P.R. ChinaYong LiangState Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P.R. ChinaHongbin WuInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaLinfeng LanInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaGang YuInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaFei HuangInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaYong CaoInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. ChinaChunhui DuanInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. China
2024en
ABI
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