Sensitive Organic Photodetectors With Spectral Response up to 1.3 µm Using a Quinoidal Molecular Semiconductor
Bingyan YinInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaXia ZhouInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaYuyang LiState Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 P. R. ChinaGangjian HuState Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering International Center of Future Science Jilin University Changchun 130015 P. R. ChinaWenkui WeiInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaMingqun YangInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaSeonghun JeongDepartment of Energy Engineering School of Energy and Chemical Engineering Low Dimensional Carbon Materials Center Perovtronics Research Center Ulsan National Institute of Science and Technology Ulsan 44919 South KoreaWanyuan DengInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaBaoqi WuInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaYunhao CaoInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaBo HuangInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaLangheng PanInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaXiao‐Ru YangInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaZhenyu FuInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaYanjun FangState Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 P. R. ChinaLiang ShenState Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering International Center of Future Science Jilin University Changchun 130015 P. R. ChinaChangduk YangDepartment of Energy Engineering School of Energy and Chemical Engineering Low Dimensional Carbon Materials Center Perovtronics Research Center Ulsan National Institute of Science and Technology Ulsan 44919 South KoreaHongbin WuInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaLinfeng LanInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaFei HuangInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaYong CaoInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. ChinaChunhui DuanInstitute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. China
2024en
ABI
Аннотация
Abstract Detecting short‐wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, the development of high‐sensitivity SWIR‐OPDs with an efficient photoelectric response extending up to 1.3 µm is reported. These OPDs utilize a new ultralow‐bandgap molecular semiconductor featuring a quinoidal tricyclic electron‐deficient central unit and multiple non‐covalent conformation locks. The SWIR‐OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a –4 V bias at 1.10 µm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal‐generation carriers and dark current, resulting in excellent detectivity ( D sh * ) exceeding 10 13 Jones from 0.50 to 1.21 µm and surpassing 10 12 Jones even at 1.30 µm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation with photoplethysmography measurements, a spectrometer prototype in the 0.35–1.25 µm range, and image capture under 1.20 µm irradiation demonstrate the extensive applications of this SWIR‐OPD.
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