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High‐Performance Broad‐Spectrum Photodetector by Suppressing Stray Electrons by Adopting a Hybrid CQD/Organic Architecture

Jiawei QiaoSchool of Physics State Key Laboratory of Crystal Materials Shandong University Jinan Shandong P. R. ChinaQian WangSchool of Physics State Key Laboratory of Crystal Materials Shandong University Jinan Shandong P. R. ChinaJingjing WangSchool of Materials Science and Engineering Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin P. R. ChinaJunwei LiuDepartment of Building Environment and Energy Engineering The Hong Kong Polytechnic University Kowloon Hong Kong P. R. ChinaWenqing ZhangSchool of Physics State Key Laboratory of Crystal Materials Shandong University Jinan Shandong P. R. ChinaXunfan LiaoKey Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Materials Jiangxi Normal University Nanchang Jiangxi P. R. ChinaLong YeSchool of Materials Science and Engineering Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin P. R. ChinaHang YinKey Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Materials Jiangxi Normal University Nanchang Jiangxi P. R. ChinaXiaotao HaoARC Centre of Excellence in Exciton Science School of Chemistry The University of Melbourne Parkville Victoria Australia
2024en
ABI

Аннотация

ABSTRACT Broad‐spectrum photodetectors (PDs) are essential for various health monitoring, night vision, and telecommunications applications, but their detectivity in a wide absorbance region is limited by undesirable electronic response properties. Colloidal quantum dots (CQDs) are a promising system for broad‐spectrum detection, whereas their practical potential is hindered by suboptimal dark current characteristics. To overcome these challenges, we propose a layered architecture comprising CQDs and a bulk heterojunction (BHJ) organic film as a hole transport layer. The integration of PbS CQDs offers multiple benefits, including bandgap tuning for minimizing thermal carriers, surface passivation to reduce recombination rates, and the formation of high‐quality interfaces with organic layers, which collectively contribute to suppressing dark current leakage and thermal excitations by suppressing stray electrons. By integrating ITIC into the BHJ film, the device detectability is significantly enhanced, reaching 10 13 Jones in the 400–1000 nm spectral range. This improvement is attributed to the higher lowest unoccupied molecular orbital (LUMO) of ITIC molecules, which effectively hinders electron injection. Additionally, J‐aggregation‐induced molecular stacking and optimized phase separation of BHJ films contribute to the enhanced performance. The integration of diverse materials offers greater flexibility in device design and functionality, enabling the development of more advanced and sophisticated optoelectronic devices. Furthermore, this approach could significantly enhance the theoretical and practical understanding of optoelectronic device engineering, leading to the development of more advanced optoelectronic devices.

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