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Dielectric relaxation and magnetodielectric response in epitaxial thin films of La2NiMnO6

Prahallad PadhanUniversity of Alabama 1 Center for Materials for Information Technology, , Tuscaloosa, Alabama 35487, USAHongjie GuoFlorida International University 2 Department of Physics, , Miami, Florida 33199, USAP. LeClairUniversity of Alabama 1 Center for Materials for Information Technology, , Tuscaloosa, Alabama 35487, USAAnurag GuptaUniversity of Alabama 1 Center for Materials for Information Technology, , Tuscaloosa, Alabama 35487, USA
2008en
ABI

Аннотация

Frequency and magnetic field dependent dielectric measurements have been performed on epitaxial thin films of the double perovskite La2NiMnO6, revealing a dielectric relaxation and magnetodielectric effect. The films are grown on Nb-doped and SrRuO3-coated SrTiO3 substrates using the pulsed laser deposition technique. While a rapid dielectric relaxation is observed at ∼300K, the relaxation rate increases dramatically at lower temperatures. Below the Curie temperature of La2NiMnO6, the dielectric constant increases in a magnetic field for a range of temperature. This temperature range depends on magnetic field and measurement frequency. The results are explained by the influence of a magnetic field on the dipolar relaxation.

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Цитирований: 2Использованных источников: 0