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Structural, optical and microwave dielectric properties of Ba(Ti1−xSnx)4O9, 0 ≤ x ≤ 0.7 ceramics

Asad AliDepartment of Physics, Government Post Graduate College, Nowshera, KP, Pakistan. [email protected]Sarir UddinMadan LalDepartment of Physics, Akal College of Basic Sciences, Eternal University, Sirmour, H.P, 173101, India. [email protected]Abid ZamanDepartment of Physics, Riphah International University, Islamabad, 44000, PakistanZafar IqbalDepartment of Physics, Riphah International University, Islamabad, 44000, PakistanKhaled AlthubeitiDepartment of Chemistry, College of Science, Taif University, Taif, 21944, Saudi Arabia. [email protected]
2021en
ABI

Аннотация

Abstract Sn-doped BaTi 4 O 9 (BT4) dielectric ceramics were prepared by a mixed oxide route. Preliminary X-ray diffraction (XRD) structural study shows that the ceramic samples have orthorhombic symmetry with space group (Pnmm). Scanning electron microscopy (SEM) shows that the grain size of the samples decreases with an increase in Sn 4+ content. The presence of the metal oxide efficient group was revealed by Fourier transform infrared (FTIR) spectroscopy. The photoluminescence spectra of the ceramic samples reported red color ~ 603, 604, 606.5 and 605 nm with excitation energy ~ 2.06, 2.05, 2.04 and 2.05 eV for Sn 4+ content with x = 0.0, 0.3, 0.5, and 0.7, respectively. The microwave dielectric properties of these ceramic samples were investigated by an impedance analyzer. The excellent microwave dielectric properties i.e. high dielectric constant (ε r = 57.29), high-quality factor (Q f = 11,852), or low-dielectric loss (3.007) has been observed.

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