Статья

Pre‐Buried Additive for Cross‐Layer Modification in Flexible Perovskite Solar Cells with Efficiency Exceeding 22%

Zhonghao ZhengSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. ChinaFaming LiSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. ChinaJue GongSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. ChinaYinyi MaSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. ChinaJinwen GuSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. ChinaXiaochun LiuSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. ChinaShuhan ChenSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. ChinaMingzhen LiuSchool of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. China

2022en

ABI

Аннотация

Abstract Halide perovskites have shown superior potentials in flexible photovoltaics due to their soft and high power‐to‐weight nature. However, interfacial residual stress and lattice mismatch due to the large deformation of flexible substrates have greatly limited the performance of flexible perovskite solar cells (F‐PSCs). Here, ammonium formate (HCOONH 4 ) is used as a pre‐buried additive in electron transport layer (ETL) to realize a bottom‐up infiltration process for an in situ, integral modification of ETL, perovskite layer, and their interface. The HCOONH 4 treatment leads to an enhanced electron extraction in ETL, relaxed residual strain and micro‐strain in perovskite film, along with reduced defect densities within these layers. As a result, a top power conversion efficiency of 22.37% and a certified 21.9% on F‐PSCs are achieved, representing the highest performance reported so far. This work links the critical connection between multilayer mechanics/defect profiles of ETL‐perovskite structure and device performance, thus providing meaningful scientific direction to further narrowing the efficiency gap between F‐PSCs and rigid‐substrate counterparts.

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Идентификаторы

DOI: 10.1002/adma.202109879

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar