Tough, Semiconducting Polyethylene‐poly(3‐hexylthiophene) Diblock Copolymers
Christian MüllerDepartment of Materials, ETH Zürich, 8093 Zürich (Switzerland)Shalom GoffriCavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (UK)Dag W. BreibyDanish Polymer Centre, Risø National Laboratory, 4000 Roskilde (Denmark)Jens Wenzel AndreasenH. ChanzyCentre de Recherches sur les Macromolécules Végétales CNRS, BP 53, 38041 Grenoble, Cedex 9 (France)René A. J. JanssenLaboratory of Macromolecular and Organic Chemistry, TU Eindhoven, 5600 MB Eindhoven (The Netherlands)M. NielsenChristopher P. RadanoLaboratory of Macromolecular and Organic Chemistry, TU Eindhoven, 5600 MB Eindhoven (The Netherlands)Henning SirringhausCavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (UK)Paul F. SmithDepartment of Materials, ETH Zürich, 8093 Zürich (Switzerland)Natalie StingelinDepartment of Materials, ETH Zürich, 8093 Zürich (Switzerland)
2007en
ABI
Аннотация
Abstract Semiconducting diblock copolymers of polyethylene (PE) and regioregular poly(3‐hexylthiophene) (P3HT) are demonstrated to exhibit a rich phase behaviour, judicious use of which permitted us to fabricate field‐effect transistors that show saturated charge carrier mobilities, μ FET , as high as 2 × 10 –2 cm 2 V –1 s –1 and ON‐OFF ratios, I on / I off ∼ 10 5 at contents of the insulating PE moiety as high as 90 wt %. In addition, the diblock copolymers display outstanding flexibility and toughness with elongations at break exceeding 600 % and true tensile strengths around 70 MPa, opening the path towards robust and truly flexible electronic components.
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