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Strain Engineering of Graphene’s Electronic Structure

Vitor M. PereiraDepartment of Physics, Boston University, Boston, Massachusetts 02215, USAA. H. Castro NetoDepartment of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
2009en
ABI

Аннотация

We explore the influence of local strain on the electronic structure of graphene. We show that strain can be easily tailored to generate electron beam collimation, 1D channels, surface states, and confinement. These can be seen as basic elements for all-graphene electronics which, by suitable engineering of local strain profiles, could be integrated on a single graphene sheet. In addition this proposal has the advantage that patterning can be made on substrates rather than on graphene, thereby protecting the integrity of the latter.

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Цитирований: 2Использованных источников: 0