Deep level defects in alpha particle irradiated 6H silicon carbide

A deep level transient spectroscopy study of native and radiation induced defects in metal organic chemical vapor deposition n on p 6H-SiC diodes has been conducted. Three majority carrier levels were found, at Ev+0.50, +0.55, and +0.69 eV, and three minority carrier deep levels were found, at Ec −0.38, −0.48, and −0.58 eV. These six levels were initially observed in the unirradiated materials. Their concentration increased 2 to 13-fold after irradiation to a fluence of 2×1011 cm−2 of 5.5 MeV alpha particles. In addition the carrier removal was monitored during irradiation, and a carrier removal rate of 7.8×104 cm−1 for 5.5 MeV alpha particles was measured. When compared with a similar study of alpha particle irradiation of InP, the results suggest that SiC has radiation resistance comparable to that of InP, another highly radiation resistant semiconductor.

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