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Dispersion of bound electron nonlinear refraction in solids

Mansoor Sheik‐BahaeCenter for Research in Electro-optics and Lasers (CREOL) and the Departments of Physics and Electrical Engineering, University of Central Florida, Orlando, FL, USAD. C. HutchingsCenter for Research in Electro-Optics and Lasers (CREOL), University of Central Florida, Orlando, FL, USADavid J. HaganCenter for Research in Electro-Optics and Lasers(CREOL) and the Department of Physics, University of Central Florida, Orlando, FL, USAEric W. Van StrylandCenter for Research in Electro-Optics and Lasers (CREOL), University of Central Florida, Orlando, FL, USA
1991en
ABI

Аннотация

A two-hand model is used to calculate the scaling and spectrum of the nondegenerate nonlinear absorption. From this, the bound electronic nonlinear refractive index n/sub 2/ is obtained using a Kramers-Kronig transformation. The authors include the effects of two-photon and Raman transitions and the AC Stark shift (virtual band blocking). The theoretical calculation for n/sub 2/ shows excellent agreement with measured values for a five-order-of-magnitude variation in the modulus of n/sub 2/ in semiconductors and wide-gap optical solids. Beam distortion methods were used to measure n/sub 2/ in semiconductors. The observations result in a comprehensive theory that allows a prediction of n/sub 2/ at wavelengths beneath the band edge, given only the bandgap energy and the linear index of refraction. Some consequences for all-optical switching are discussed, and a wavelength criterion for the observation of switching is derived.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

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