CsBi <sub>4</sub> Te <sub>6</sub> : A High-Performance Thermoelectric Material for Low-Temperature Applications
Duck Young ChungDepartment of Chemistry, Michigan State University and Center for Fundamental Materials Research, East Lansing, MI 48824, USATim HoganElectrical and Computer Engineering & Materials Science and Mechanics, Michigan State University, East Lansing, MI 48824, USAPaul BrazisDepartment of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USAMelissa Rocci‐LaneDepartment of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USACarl R. KannewurfDepartment of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USAMarina BasteaDepartment of Physics, University of Michigan, Ann Arbor, MI 48109, USACtirad UherDepartment of Physics, University of Michigan, Ann Arbor, MI 48109, USAMercouri G. KanatzidisDepartment of Chemistry, Michigan State University and Center for Fundamental Materials Research, East Lansing, MI 48824, USA
2000en
ABI
Аннотация
Thermoelectric (Peltier) heat pumps are capable of refrigerating solid or fluid objects, and unlike conventional vapor compressor systems, they can be miniaturized without loss of efficiency. More efficient thermoelectric materials need to be identified, especially for low-temperature applications in electronics and devices. The material CsBi(4)Te(6) has been synthesized and its properties have been studied. When doped appropriately, it exhibits a high thermoelectric figure of merit below room temperature (ZT(max) approximately 0.8 at 225 kelvin). At cryogenic temperatures, the thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 2Использованных источников: 0