Two-photon and three-photon absorption coefficients of InSb
M. Sheik-BahaeiDepartment of Electrical and Computer Engineering, Bonner Hall, State University of New York at Buffalo, Amherst, New York 14260. USAPrabir K. MukherjeeDepartment of Electrical and Computer Engineering, Bonner Hall, State University of New York at Buffalo, Amherst, New York 14260. USAHoi Sing KwokDepartment of Electrical and Computer Engineering, Bonner Hall, State University of New York at Buffalo, Amherst, New York 14260. USA
1986en
ABI
Аннотация
The two-photon absorption coefficient β of intrinsic InSb and the three-photon absorption coefficient γ of doped InSb were measured with high-intensity picosecond CO2 laser pulses. The picosecond duration permitted the determination of the multiphoton absorption coefficients without interference from carrier recombination and diffusion. Moreover, free-carrier absorption was made use of explicitly to enhance the absorption of the laser beam, permitting a more accurate measurement of these coefficients. The values of β and γ were found to be 2.5 cm/MW and 0.2 cm3/MW2, respectively. These values are compared with theoretical calculations in the literature.
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