Статья

Deep-level emissions influenced by O and Zn implantations in ZnO

Qiming ZhaoGöteborg University Physical Electronics and Photonics, Department of Physics, , SE-412 96 Göteborg, SwedenPeter KlasonGöteborg University Physical Electronics and Photonics, Department of Physics, , SE-412 96 Göteborg, SwedenM. WillanderGöteborg University Physical Electronics and Photonics, Department of Physics, , SE-412 96 Göteborg, SwedenHongliang ZhongShanghai Institute of Technical Physics National Laboratory for Infrared Physics, , Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaWei LüShanghai Institute of Technical Physics National Laboratory for Infrared Physics, , Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaJinghai YangJilin Normal University Institute of Condensed State Physics, , SiPing, Jilin 136000, People’s Republic of China

2005en

ABI

Аннотация

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×1017∕cm3 and 5×1019∕cm3. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the VZn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08eV at 77K appears in the O-implanted sample with 5×1019∕cm3 implantation concentration. The novel emission is tentatively identified as O-antisite OZn.

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Идентификаторы

DOI: 10.1063/1.2135880

Цитирования и источники

Цитирований: 4Использованных источников: 0

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