Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films
Xiaohong WuNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of ChinaG. G. SiuDepartment of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of ChinaC. L. FuDepartment of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of ChinaH. C. OngDepartment of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China
2001en
ABI
Аннотация
Photoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green (yellow) emission is the recombination of a delocalized electron close to the conduction band with a deeply trapped hole in the single ionized oxygen vacancy Vo+ (the single negatively charged interstitial oxygen ion Oi−) center in the particle.
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