Статья

Luminescence properties of ZnO layers grown on Si-on-insulator substrates

Bhupendra KumarNational University of Singapore Department of Materials Science and Engineering, , 119260 Singapore, SingaporeHao GongNational University of Singapore Department of Materials Science and Engineering, , 119260 Singapore, SingaporeS. VickneshInstitute of Materials Research and Engineering , 3 Research Link, 117602 Singapore, SingaporeS. J. ChuaInstitute of Materials Research and Engineering , 3 Research Link, 117602 Singapore, SingaporeS. TripathyInstitute of Materials Research and Engineering , 3 Research Link, 117602 Singapore, Singapore

2006en

ABI

Аннотация

The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E2high optical phonon mode near 438cm−1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35eV at 77K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05–3.09eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems.

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Идентификаторы

DOI: 10.1063/1.2357870

Цитирования и источники

Цитирований: 5Использованных источников: 0

Показатели — AkademScholar