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Impact of visible light illumination on ultraviolet emission from ZnO nanocrystals

S. S. KurbanovHeat Physics Department, Uzbekistan Academy of Sciences, Tashkent 700135, UzbekistanГ. Н. ПанинIMT&HPM, RAS, Chernogolovka, Moscow distr. 142432, RussiaT. W. KimAdvanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133791, Republic of KoreaTae Won KangQuantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100715, Republic of Korea
Physical Review Bjournal2008en
ABI

Аннотация

The influence of a visible ${\text{Ar}}^{+}$-laser (488 nm) illumination on photoluminescence (PL) from ZnO nanocrystals excited by He-Cd laser (325 nm) at various excitation intensities and temperatures was investigated. A reversible quenching of the UV near-band-edge emission under ${\text{Ar}}^{+}$-laser illumination was observed. The quenching effect increases with decreasing temperature and He-Cd laser intensity at fixed intensity of ${\text{Ar}}^{+}$-laser. It is found that the recovery time of the initial PL intensity depends on temperature and ${\text{Ar}}^{+}$-laser exposure time. At room temperature the PL restored the initial intensity instantly after the turning off the ${\text{Ar}}^{+}$-laser illumination; however at 10 K this process took several minutes. The proposed mechanism of the observed quenching effect implies an appearance of the additional recombination channel under a visible light illumination due to the recharging of oxygen-vacancy states in the surface depletion zone.

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