Работы, цитирующие эту работу

Работ: 3

Работа: Intrinsic and extrinsic performance limits of graphene devices on SiO2

1. Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

   Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8

   СтатьяGraphene research and applicationsACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.074035

2. Quantum Hall and Shubnikov-de Haas Effects in Graphene within Non-Markovian Langevin Approach

   E. Kh. Alpomishev, G. G. Adamian, N. V. Antonenko

   СтатьяGraphene research and applicationsSymmetry2023Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.282603

3. Neutron diffraction as a precise and reliable method for obtaining structural properties of bulk quantities of graphene

   Zdeněk Sofer, Petr Šimek, Ondřej Jankovský +3

   СтатьяGraphene research and applicationsNanoscale2014Цитирований: 1

   ABIABI:AkademIndex/openalex/2014.article.000049