Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
Avinash P. NayakDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78712, Texas, USASwastibrata BhattacharyyaMaterials Research Center, Indian Institute of Science, Bangalore, 560-012, IndiaJie ZhuBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, ChinaJin LiuDepartment of Geological Sciences, The University of Texas at Austin, Austin, 78712, Texas, USAXiang Xia WuDepartment of Geological Sciences, The University of Texas at Austin, Austin, 78712, Texas, USATribhuwan PandeyMaterials Research Center, Indian Institute of Science, Bangalore, 560-012, IndiaChangqing JinBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, ChinaAbhishek K. SinghMaterials Research Center, Indian Institute of Science, Bangalore, 560-012, IndiaDeji AkinwandeDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78712, Texas, USAJung‐Fu LinDepartment of Geological Sciences, The University of Texas at Austin, Austin, 78712, Texas, USA
2014en
ABI
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