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Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Mg</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Sn</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:math>Solid Solutions

Wei LiuState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, ChinaXiaojian TanKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, ChinaKang YinState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, ChinaHuijun LiuKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, ChinaXinfeng TangState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, ChinaJing ShiKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, ChinaQingjie ZhangState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, ChinaCtirad UherDepartment of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
2012lv
ABI

Аннотация

Mg(2)Si and Mg(2)Sn are indirect band gap semiconductors with two low-lying conduction bands (the lower mass and higher mass bands) that have their respective band edges reversed in the two compounds. Consequently, for some composition x, Mg(2)Si(1-x)Sn(x) solid solutions must display a convergence in energy of the two conduction bands. Since Mg(2)Si(1-x)Sn(x) solid solutions are among the most prospective of the novel thermoelectric materials, we aim on exploring the influence of such a band convergence (valley degeneracy) on the Seebeck coefficient and thermoelectric properties in a series of Mg(2)Si(1-x)Sn(x) solid solutions uniformly doped with Sb. Transport measurements carried out from 4 to 800 K reveal a progressively increasing Seebeck coefficient that peaks at x=0.7. At this concentration the thermoelectric figure of merit ZT reaches exceptionally large values of 1.3 near 700 K. Our first principles calculations confirm that at the Sn content x≈0.7 the two conduction bands coincide in energy. We explain the high Seebeck coefficient and ZT values as originating from an enhanced density-of-states effective mass brought about by the increased valley degeneracy as the two conduction bands cross over. We corroborate the increase in the density-of-states effective mass by measurements of the low temperature specific heat. The research suggests that striving to achieve band degeneracy by means of compositional variations is an effective strategy for enhancing the thermoelectric properties of these materials.

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