Статья

Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

Sang Il KimDepartment of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South KoreaKyu Hyoung LeeDepartment of Nano Applied Engineering, Kangwon National University, Chuncheon 200-701, South KoreaHyeon A. MunDepartment of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South KoreaHyun‐Sik KimMaterials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South KoreaSung Woo HwangMaterials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South KoreaJong Wook RohMaterials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South KoreaDae Jin YangMaterials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South KoreaWeon Ho ShinMaterials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South KoreaXiang Shu LiMaterials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South KoreaYoung Hee LeeDepartment of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South KoreaG. Jeffrey SnyderDepartment of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South KoreaSung Wng KimDepartment of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South Korea

2015en

ABI

Аннотация

The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit (zT). The zT of bulk alloys can be improved by reducing lattice thermal conductivity through grain boundary and point-defect scattering, which target low- and high-frequency phonons. Dense dislocation arrays formed at low-energy grain boundaries by liquid-phase compaction in Bi(0.5)Sb(1.5)Te3 (bismuth antimony telluride) effectively scatter midfrequency phonons, leading to a substantially lower lattice thermal conductivity. Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved the zT to 1.86 ± 0.15 at 320 kelvin (K). Further, a thermoelectric cooler confirmed the performance with a maximum temperature difference of 81 K, which is much higher than current commercial Peltier cooling devices.

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Идентификаторы

DOI: 10.1126/science.aaa4166

Цитирования и источники

Цитирований: 4Использованных источников: 0

Показатели — AkademScholar