Статья

Nickel: A very fast diffuser in silicon

Jeanette LindroosDepartment of Micro and Nanosciences 1 , Aalto University, Tietotie 3, 02150 Espoo, FinlandDavid P. FenningDepartment of Mechanical Engineering, Massachusetts Institute of Technology 2 , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USAD. J. BacklundDepartment of Physics, Texas Tech University 3 , Lubbock, Texas 79409-1051, USAErik VerlageDepartment of Mechanical Engineering, Massachusetts Institute of Technology 2 , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USAAngelika GorgullaDepartment of Physics, University of Konstanz 4 , Jacob-Burckhardt-Str. 29, 78464 Konstanz, GermanyS. K. EstreicherDepartment of Physics, Texas Tech University 3 , Lubbock, Texas 79409-1051, USAHele SavinDepartment of Micro and Nanosciences 1 , Aalto University, Tietotie 3, 02150 Espoo, FinlandTonio BuonassisiDepartment of Mechanical Engineering, Massachusetts Institute of Technology 2 , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA

2013en

ABI

Аннотация

Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the potential to create highly recombination-active precipitates in silicon. For nearly three decades, the accepted nickel diffusivity in silicon has been DNi(T)=2.3×10−3exp(−0.47 eV/kBT) cm2/s, a surprisingly low value given reports of rapid nickel diffusion in industrial applications. In this paper, we employ modern experimental methods to measure the higher nickel diffusivity DNi(T)=(1.69±0.74)×10−4exp(−0.15±0.04 eV/kBT) cm2/s. The measured activation energy is close to that predicted by first-principles theory using the nudged-elastic-band method. Our measured diffusivity of nickel is higher than previously published values at temperatures below 1150 °C, and orders of magnitude higher when extrapolated to room temperature.

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Идентификаторы

DOI: 10.1063/1.4807799

Цитирования и источники

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