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Recent development of two-dimensional transition metal dichalcogenides and their applications

Wonbong ChoiDepartment of Materials Science and Engineering, Mechanical and Energy Engineering, University of North Texas, Denton, TX 76207, United StatesNitin ChoudharyDepartment of Materials Science and Engineering, Mechanical and Energy Engineering, University of North Texas, Denton, TX 76207, United StatesGang HanDepartment of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of KoreaJuhong ParkDepartment of Materials Science and Engineering, Mechanical and Energy Engineering, University of North Texas, Denton, TX 76207, United StatesDeji AkinwandeDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, United StatesYoung Hee LeeCenter for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
2017en
ABI

Аннотация

Recent advances in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) have led to a variety of promising technologies for nanoelectronics, photonics, sensing, energy storage, and opto-electronics, to name a few. This article reviews the recent progress in 2D materials beyond graphene and includes mainly transition metal dichalcogenides (TMDs) (e.g. MoS 2 , WS 2 , MoSe 2 , and WSe 2 ). These materials are finding niche applications for next-generation electronics and optoelectronics devices relying on ultimate atomic thicknesses. Albeit several challenges in developing scalable and defect-free TMDs on desired substrates, new growth techniques compatible with traditional and unconventional substrates have been developed to meet the ever-increasing demand of high quality and controllability for practical applications. The fabrication of novel 2D TMDs that exhibit exotic functionalities and fundamentally new chemistry is highlighted. And finally, in parallel with the electronics, the considerable effort devoted to using these materials for energy and sensing applications is discussed in detail.

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