Статья

High Efficiency Graphene Solar Cells by Chemical Doping

Xiaochang MiaoDepartment of Physics, ‡Department of Material Science and Engineering, and §Nanoscience Institute for Medical and Engineering Technologies, University of Florida, Gainesville, Florida 32611, United StatesSefaattin TongayDepartment of Physics, ‡Department of Material Science and Engineering, and §Nanoscience Institute for Medical and Engineering Technologies, University of Florida, Gainesville, Florida 32611, United StatesMaureen K. PettersonDepartment of Physics, ‡Department of Material Science and Engineering, and §Nanoscience Institute for Medical and Engineering Technologies, University of Florida, Gainesville, Florida 32611, United StatesKara BerkeDepartment of Physics, ‡Department of Material Science and Engineering, and §Nanoscience Institute for Medical and Engineering Technologies, University of Florida, Gainesville, Florida 32611, United StatesAndrew G. RinzlerDepartment of Physics, ‡Department of Material Science and Engineering, and §Nanoscience Institute for Medical and Engineering Technologies, University of Florida, Gainesville, Florida 32611, United StatesBill R. AppletonDepartment of Physics, ‡Department of Material Science and Engineering, and §Nanoscience Institute for Medical and Engineering Technologies, University of Florida, Gainesville, Florida 32611, United StatesArthur F. HebardDepartment of Physics, ‡Department of Material Science and Engineering, and §Nanoscience Institute for Medical and Engineering Technologies, University of Florida, Gainesville, Florida 32611, United States

2012en

ABI

Аннотация

We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native (undoped) device performance by a factor of 4.5 and is the highest PCE reported for graphene-based solar cells to date. Current-voltage, capacitance-voltage, and external quantum efficiency measurements show the enhancement to be due to the doping-induced shift in the graphene chemical potential that increases the graphene carrier density (decreasing the cell series resistance) and increases the cell's built-in potential (increasing the open circuit voltage) both of which improve the solar cell fill factor.

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Идентификаторы

DOI: 10.1021/nl204414u

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar