Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
Anthony J. KenyonDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United KingdomC.E. ChryssouDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United KingdomC.W. PittDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United KingdomTsutomu Shimizu-IwayamaDepartment of Materials Science, Aichi University of Education, Igaya-cho, Kariya-shi, Aichi 448-8542, JapanD.E. HoleSchool of Engineering, University of Sussex, Falmer, Brighton BN1 9QH, United KingdomNikhil SharmaDepartment of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United KingdomC. J. HumphreysDepartment of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
2002en
ABI
Аннотация
We develop a model for the excitation of erbium ions in erbium-doped silicon nanocrystals via coupling from confined excitons generated within the silicon nanoclusters. The model provides a phenomenological picture of the exchange mechanism and allows us to evaluate an effective absorption cross section for erbium of up to 7.3×10−17 cm2: four orders of magnitude higher than in stoichiometric silica. We address the origin of the 1.6 eV emission band associated with the silicon nanoclusters and determine absorption cross sections and excitonic lifetimes for nanoclusters in silica which are of the order of 1.02×10−16 cm2 and 20–100 μs, respectively.
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