Recombination property of nitrogen-acceptor-bound states in ZnO
Xudong YangInstitute of Semiconductors State Key Laboratory for Superlattices and Microstructures, , Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaZ. Y. XuInstitute of Semiconductors State Key Laboratory for Superlattices and Microstructures, , Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaZhiwei SunInstitute of Semiconductors State Key Laboratory for Superlattices and Microstructures, , Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaBaoquan SunInstitute of Semiconductors State Key Laboratory for Superlattices and Microstructures, , Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaLu DingHong Kong University of Science and Technology Department of Physics, , Clear Water Bay, Kowloon, Hong Kong, ChinaF. Z. WangZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou, ChinaZhihong YeZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou, China
2006en
ABI
Аннотация
The recombination property of nitrogen (N)-related acceptor-bound states in ZnO has been investigated by photoluminescence (PL), time-resolved PL, and selective PL. Several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large Coulomb interaction. It is strongly suggested that bound exciton emission dominates the recombination process related to the N acceptor. The recombination lifetime is 750ps and the binding energy is 67meV for N-acceptor-bound exciton at low temperature.
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