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Enhancement in figure of merit in N-type Bi(R)-Te thermoelectric nanomaterials

Faisal GhafoorApplied Thermal Physics Laboratory, Department of Physics, COMSATS University Islamabad, Islamabad 45550, PakistanBilal GhafoorFederal University of Rio Grande Do Sul, Porto Alegre, BrazilDeok‐kee KimDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaMuhammad Farooq KhanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaM. Anis-ur-RehmanApplied Thermal Physics Laboratory, Department of Physics, COMSATS University Islamabad, Islamabad 45550, Pakistan
2023en
ABI

Аннотация

In this paper, we reported the cerium (Ce) doped thermoelectric materials with composition Bi2−xRxTe3 (R = Ce, x = 0.0, 0.1, and 0.2), which were prepared by using different wet chemical methods. The selected synthesis methods that were used included a simplified sol-gel method (Without Water and Surfactants-WOWS) and the Composite Mediated Hydrothermal Method (CMHM). The structural analysis of the samples showed rhombohedral and hexagonal structures. In addition, the surface morphology revealed a flower-like structure for the synthesized samples. The thermal stability was determined using differential scanning calorimetry and thermogravimetric analysis. The electrical conductivity of the samples with a doping ratio of x = 0.1 showed maximum conductivity of (19.10 × 103 (S/cm))-WOWS; (9.10 × 103 (S/cm)) – (CMHM) as compared to than that of other samples (x = 0.0 and 0.2). Interestingly, the doping of Ce increased the Seebeck effect, which also increased the power factor. The power factor of the samples x = 0.1 was higher than that of the undoped samples, which had a magnitude of 12.30 μW/cm.K2 (WOWS) and 7.02 μW/cm.K2 (CMHM). Moreover, we measured the thermal conductivity of the samples using the Advantageous Transient Plane Source (ATPS) method. Therefore, we found the higher figure of merit (ZT) value (0.41) at x = 0.1, which was prepared using a simplified sol-gel method, which is among the highest values that was reported for Bi2−xRxTe3 at room temperature. Because of its potential applications this material has great interest as a thermoelectric material and chip cooling sensing.

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