Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
A. ZubiagaLaboratory of Physics, Helsinki University of Technology, 02150 Espoo, FinlandFilip TuomistoLaboratory of Physics, Helsinki University of Technology, 02150 Espoo, FinlandF. PlazaolaLaboratory of Physics, Helsinki University of Technology, 02150 Espoo, FinlandK. SaarinenLaboratory of Physics, Helsinki University of Technology, 02150 Espoo, FinlandJosé Antonio Millán-GarcíaFisika Aplikatua II Saila, Euskal Herriko Unibertsitatea, P.K. 644, 48080 Bilbao, SpainJ.F. RommeluèreCNRS-LPS, 1 Place A. Briand, F-92195 Meudon, Cedex, FranceJ. Zúñiga‐PérezUniversitat de València, Departamento de Fisica Aplicada i Electromagnetisme, Dr. Moliner 50, 46100 Burjassot, Valencia, SpainV. Muñoz‐SanjoséUniversitat de València, Departamento de Fisica Aplicada i Electromagnetisme, Dr. Moliner 50, 46100 Burjassot, Valencia, Spain
2005en
ABI
Аннотация
Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 4Использованных источников: 0