Atomically thin p–n junctions with van der Waals heterointerfaces
Chul‐Ho Lee1] Department of Physics, Columbia University, New York, New York 10027, USA [2] Department of Chemistry, Columbia University, New York, New York 10027, USA [3] KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, KoreaGwan‐Hyoung LeeDepartment of Materials Science and Engineering, Yonsei University, Seoul 120-749, KoreaArend M. van der ZandeEnergy Frontier Research Center (EFRC), 1001 Schapiro Center (CEPSR), Columbia University, New York, New York 10027, USAWenchao ChenDepartment of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611-6200, USAYilei LiDepartment of Physics, Columbia University, New York, New York 10027, USAMinyong HanDepartment of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USAXu CuiDepartment of Mechanical Engineering, Columbia University, New York, New York 10027, USAGhidewon ArefeDepartment of Mechanical Engineering, Columbia University, New York, New York 10027, USAColin NuckollsDepartment of Chemistry, Columbia University, New York, New York 10027, USATony F. Heinz1] Department of Physics, Columbia University, New York, New York 10027, USA [2] Department of Electrical Engineering, Columbia University, New York, New York 10027, USAJing GuoDepartment of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611-6200, USAJames HoneDepartment of Mechanical Engineering, Columbia University, New York, New York 10027, USAPhilip KimDepartment of Physics, Columbia University, New York, New York 10027, USA
2014en
ABI
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