Статья

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Tiefeng YangKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, ChinaBiyuan ZhengKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, ChinaZhen WangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, ChinaTao XuSEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, 210096, Nanjing, ChinaChen PanNational Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, ChinaJuan ZouKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, ChinaXuehong ZhangKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, ChinaZhaoyang QiKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, ChinaHongjun LiuKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, ChinaYexin FengKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, ChinaWeida HuState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China. [email protected]Feng MiaoNational Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, ChinaLitao SunSEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, 210096, Nanjing, ChinaXiangfeng DuanDepartment of Chemistry and Biochemistry and California NanoSystems Institute, University of California at Los Angeles, Los Angeles, CA, 90095, USAAnlian PanKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, China. [email protected]

2017en

ABI

Аннотация

Abstract High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p–n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 −14 A and a highest on–off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

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Идентификаторы

DOI: 10.1038/s41467-017-02093-z

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