Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects
Аннотация
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS 2 ) have recently attracted much attention due to their nonzero‐gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS 2 ‐based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS 2 thin layers, and the progress made so far for their doping‐based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped‐MoS 2 in industry, as a guide for 2D material community, are also provided.
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