Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
Yuya SakurabaTohoku University Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, JapanMasashi HattoriTohoku University Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, JapanMikihiko OoganeTohoku University Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, JapanYasuo AndoTohoku University Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, JapanH. KatôTohoku University Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, JapanAkimasa SakumaTohoku University Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, JapanT. MiyazakiTohoku University Department of Applied Physics, Graduate School of Engineering, , Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, JapanHitoshi KubotaNanoelectronics Research Institute , National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568, Japan
2006en
ABI
Аннотация
Magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi∕Al–O∕Co2MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al–O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 2Использованных источников: 0