Crystal Growth of Fluorides for Optical Applications
Kiyoshi ShimamuraInstitute for Materials Research, Tohoku University, Sendai, JapanHiroki SatoInstitute for Materials Research, Tohoku University, Sendai, JapanAmina Bensalah‐LedouxInstitute for Materials Research, Tohoku University, Sendai, JapanVikas SudeshInstitute for Materials Research, Tohoku University, Sendai, JapanHiroshi MachidaNobuhiko SarukuraInstitute for Molecular Science, Okazaki, JapanT. FukudaInstitute for Materials Research, Tohoku University, Sendai, Japan
2001en
ABI
Аннотация
Ce-doped and undoped LiCaAlF 6, LiSrAlF6, LiYF4, LiLuF4 and KMgF3 single crystals were grown by the Czochralski technique under CF4 atmosphere. The effective distribution coefficients of Ce3+in LiCaAlF6, LiSrAlF6, LiYF4 and LiLuF4 were determined to be 0.031, 0.028, 0.116 and 0.054, respectively. Laser output energy of 60 mJ and 27 mJ were obtained using the grown Ce:LiCaAlF6 and Ce:LiLuF 4 single crystals, respectively. Undoped LiCaAlF6 and KMgF3 single crystals showed a transmission edge at 112 nm and 115 nm, respectively.
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