Ultrasound-induced surface hardening of dislocation-free silicon

The effect of ultrasonic treatment on the microplastic properties of a near-surface layer in dislocation-free silicon single crystals was studied using [111]-oriented p-Si samples with artificial dislocation rosettes. The ultrasonic processing resulted in the formation of an approximately 100-µm-thick hardened near-surface layer and the emergence of point-defect pileups of the vacancy and/or vacancy-impurity cluster type on the sample surface. Possible mechanisms of the observed phenomena are discussed.

Перевод пока недоступен