Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells

The results of an experimental study of silicon solar cells operating under conditions of dynamic ultrasonic loading are presented. Based on an analysis of current-voltage characteristics, the dependences of the short-circuit current, open-circuit voltage, maximum output power, shunt resistance, reverse current, and breakdown voltage on the strain caused by acoustic waves of various frequencies are studied. Possible mechanisms of the acoustic effect are analyzed. In particular, acoustically induced transformation of recombination centers (e.g., BSO2i complexes) and ionization of levels associated with extended defects in the p-n junction region are considered.

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