Работы, цитирующие эту работу

Работ: 2

Работа: Excitation-power dependence of the near-band-edge photoluminescence of semiconductors

1. Complex features of the photoluminescence from ZnO nanorods grown by vapor-phase transport method

   R.R. Jalolov, Ш.З. Уролов, Z. Sh. Shaymardanov +2

   СтатьяZnO doping and propertiesMaterials Science in Semiconductor Processing2021Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.115772

2. The UV-laser induced heating effect on photoluminescence from ZnO nanocrystals deposited on different substrates

   S. S. Kurbanov, Kh. T. Igamberdiev, Tae Won Kang

   СтатьяZnO doping and propertiesJournal of Physics D Applied Physics2010Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.203237