Статья

Poly(3-hexylthiophene-2,5-diyl) as a Hole Transport Layer for Colloidal Quantum Dot Solar Cells

Darren C. J. NeoMaterials Department, University of Oxford, 16 Parks Road, OX1 3PH Oxford, United KingdomNanlin ZhangMaterials Department, University of Oxford, 16 Parks Road, OX1 3PH Oxford, United KingdomYujiro TazawaMaterials Department, University of Oxford, 16 Parks Road, OX1 3PH Oxford, United KingdomHaibo JiangCentre for Microscopy, Characterisation and Analysis, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Western Australia AustraliaGareth M. HughesMaterials Department, University of Oxford, 16 Parks Road, OX1 3PH Oxford, United KingdomC.R.M. GrovenorMaterials Department, University of Oxford, 16 Parks Road, OX1 3PH Oxford, United KingdomHazel E. AssenderMaterials Department, University of Oxford, 16 Parks Road, OX1 3PH Oxford, United KingdomAndrew A. R. WattMaterials Department, University of Oxford, 16 Parks Road, OX1 3PH Oxford, United Kingdom

2016en

ABI

Аннотация

Lead sulfide colloidal quantum dot (CQD) solar cells demonstrate extremely high short-circuit currents (Jsc) and are making decent progress in power conversion efficiencies. However, the low fill factors (FF) and open-circuit voltages have to be addressed with urgency to prevent the stalling of efficiency improvements. This paper highlights the importance of improving hole extraction, which received much less attention as compared to the electron-accepting component of the device architecture (e.g., TiO2 or ZnO). Here, we show the use of semiconducting polymer poly(3-hexylthiophene-2,5-diyl) to create efficient CQD devices by improving hole transport, removing interfacial barriers, and minimizing shunt pathways, thus resulting in an overall improvement in device performance stemming from better Jsc and FF.

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Идентификаторы

DOI: 10.1021/acsami.5b10228

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar