Статья

Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

Akihito SawaNational Institute of Advanced Industrial Science and Technology (AIST) Correlated Electron Research Center (CERC), , Tsukuba, Ibaraki 305-8562, JapanToshihiro FujiiNational Institute of Advanced Industrial Science and Technology (AIST) Correlated Electron Research Center (CERC), , Tsukuba, Ibaraki 305-8562, JapanM. KawasakiNational Institute of Advanced Industrial Science and Technology (AIST) Correlated Electron Research Center (CERC), , Tsukuba, Ibaraki 305-8562, JapanYoshinori TokuraNational Institute of Advanced Industrial Science and Technology (AIST) Correlated Electron Research Center (CERC), , Tsukuba, Ibaraki 305-8562, Japan

2004en

ABI

Аннотация

We have characterized the vertical transport properties of epitaxial layered structures composed of Pr0.7Ca0.3MnO3(PCMO) sandwiched between SrRuO3(SRO) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti. Among the layered structures, Ti∕PCMO∕SRO is distinct due to a rectifying I–V characteristic with a large hysteresis. Corresponding to the hysteresis of the I–V characteristics, the contact resistance of the Ti∕PCMO interface reversibly switches between two stable states by applying pulsed voltage stress. We propose a model for the resistance switching at the Ti∕PCMO interface, in which the width and/or height of a Schottky-like barrier are altered by trapped charge carriers in the interface states.

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Идентификаторы

DOI: 10.1063/1.1812580

Цитирования и источники

Цитирований: 2Использованных источников: 0

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