Transport properties and origin of ferromagnetism in (Ga,Mn)As
F. MatsukuraLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, JapanHideo OhnoLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, JapanAidong ShenLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, JapanYasuhiro SugawaraLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, Japan
1998en
ABI
Аннотация
Magnetotransport properties of $p$-type ferromagnetic (Ga,Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the $p\ensuremath{-}d$ exchange between holes and Mn $3d$ spins is determined. The ferromagnetic transition temperatures calculated based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction using the exchange reproduce remarkably well the observed ferromagnetic transition temperatures, demonstrating that ferromagnetism of (Ga,Mn)As has its origin in the RKKY interaction mediated by holes.
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