Статья

Above room temperature ferromagnetism in Mn-ion implanted Si

M. BolducCollege of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USAC. Awo-AffoudaCollege of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USAAndrew StollenwerkCollege of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USAMengbing HuangCollege of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USAF. G. RamosCollege of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USAGabriel AgnelloCollege of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USAV. P. LaBellaCollege of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USA

2005en

ABI

Аннотация

Above room temperature ferromagnetic behavior is achieved in Si through Mn ion implantation. Three-hundred-keV ${\mathrm{Mn}}^{+}$ ions were implanted to 0.1% and 0.8% peak atomic concentrations, yielding a saturation magnetization of $0.3\phantom{\rule{0.3em}{0ex}}\mathrm{emu}∕\mathrm{g}$ at $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ for the highest concentration as measured using a SQUID magnetometer. The saturation magnetization increased by $\ensuremath{\sim}2\ifmmode\times\else\texttimes\fi{}$ after annealing at $800\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ for $5\phantom{\rule{0.3em}{0ex}}\mathrm{min}$. The Curie temperature for all samples was found to be greater than $400\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. A significant difference in the temperature-dependent remnant magnetization between the implanted p-type and n-type Si is observed, giving strong evidence that a Si-based diluted magnetic semiconductor can be achieved.

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Идентификаторы

DOI: 10.1103/physrevb.71.033302

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