Phase transition and Raman‐active modes in TlInS<sub>2</sub>
Raul PaucarElectronics and Computer Engineering, Chiba Institute of Technology, Chiba, JapanKazuki HaradaElectronics and Computer Engineering, Chiba Institute of Technology, Chiba, JapanRyoya MatsumotoElectronics and Computer Engineering, Chiba Institute of Technology, Chiba, JapanKazuki WakitaElectronics and Computer Engineering, Chiba Institute of Technology, Chiba, JapanYongGu ShimGraduate School of Engineering, Osaka Prefecture University, Osaka, JapanO. Z. AlekperovInstitute of Physics, Azerbaijan National Academy of Sciences, Baku, AzerbaijanNazim MamedovInstitute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan
2013en
ABI
Аннотация
Abstract Raman spectra of layered ternary thallium chalcogenide TlInS 2 were studied with the aid of 3D confocal Raman system over the temperature range 77–300K in the frequency region of 120–400 cm –1 . The observed lines in the obtained Raman spectra were denconvoluted into Lorentzian peaks and temperature dependence of each peak's parameters (peak position and half width at half maximum) were obtained. An irregular behaviour of the temperature dependence of Loretzian parameters is reported. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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