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High efficiency silicon solar cell based on asymmetric nanowire

Myung-Dong KoDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH),77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, KoreaTaiuk RimDepartment of Creative IT Engineering &Future IT Innovation Lab (POSTECH i-Lab), Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, KoreaKi‐Hyun KimDepartment of Creative IT Engineering &Future IT Innovation Lab (POSTECH i-Lab), Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, KoreaM. Meyyappan1] Department of Creative IT Engineering &Future IT Innovation Lab (POSTECH i-Lab), Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, Korea [2] NASA Ames Research Center, Moffett Field, CA, 94035Chang‐Ki Baek1] Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH),77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, Korea [2] Department of Creative IT Engineering &Future IT Innovation Lab (POSTECH i-Lab), Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Kyeongbuk, Korea
2015en
ABI

Аннотация

Improving the efficiency of solar cells through novel materials and devices is critical to realize the full potential of solar energy to meet the growing worldwide energy demands. We present here a highly efficient radial p-n junction silicon solar cell using an asymmetric nanowire structure with a shorter bottom core diameter than at the top. A maximum short circuit current density of 27.5 mA/cm(2) and an efficiency of 7.53% were realized without anti-reflection coating. Changing the silicon nanowire (SiNW) structure from conventional symmetric to asymmetric nature improves the efficiency due to increased short circuit current density. From numerical simulation and measurement of the optical characteristics, the total reflection on the sidewalls is seen to increase the light trapping path and charge carrier generation in the radial junction of the asymmetric SiNW, yielding high external quantum efficiency and short circuit current density. The proposed asymmetric structure has great potential to effectively improve the efficiency of the SiNW solar cells.

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