Статья

Full potential of radial junction Si thin film solar cells with advanced junction materials and design

Shengyi QianNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaSoumyadeep MisraEcole Polytechnique 2 LPICM, CNRS, , 91128 Palaiseau, FranceJiawen LuNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaZhongwei YuNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaLinwei YuEcole Polytechnique 2 LPICM, CNRS, , 91128 Palaiseau, FranceJun XuNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaJunzhuan WangNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaLing XuNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaYi ShiNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaKunji ChenNanjing University 1 National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, , Nanjing 210093, ChinaPere Roca i CabarrocasEcole Polytechnique 2 LPICM, CNRS, , 91128 Palaiseau, France

2015en

ABI

Аннотация

Combining advanced materials and junction design in nanowire-based thin film solar cells requires a different thinking of the optimization strategy, which is critical to fulfill the potential of nano-structured photovoltaics. Based on a comprehensive knowledge of the junction materials involved in the multilayer stack, we demonstrate here, in both experimental and theoretical manners, the potential of hydrogenated amorphous Si (a-Si:H) thin film solar cells in a radial junction (RJ) configuration. Resting upon a solid experimental basis, we also assess a more advanced tandem RJ structure with radially stacking a-Si:H/nanocrystalline Si (nc-Si:H) PIN junctions, and show that a balanced photo-current generation with a short circuit current density of Jsc = 14.2 mA/cm2 can be achieved in a tandem RJ cell, while reducing the expensive nc-Si:H absorber thickness from 1–3 μ m (in planar tandem cells) to only 120 nm. These results provide a clearly charted route towards a high performance Si thin film photovoltaics.

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Идентификаторы

DOI: 10.1063/1.4926991

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar