Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient
Dharmapura H. K. MurthyOptoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Delft, The NetherlandsTao XuInstitut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, FranceWanghua ChenGroupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Avenue de l’université, BP 12, 76801 Saint Etienne du Rouvray, FranceArjan J. HoutepenOptoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, 2628 BL Delft, The NetherlandsTom J. SavenijeOptoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, 2628 BL Delft, The NetherlandsLaurens D. A. SiebbelesOptoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, 2628 BL Delft, The NetherlandsJ. P. NysInstitut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, FranceChristophe KrzeminskiInstitut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, FranceB. GrandidierInstitut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, FranceD. StiévenardInstitut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, FranceP. PareigeGroupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Avenue de l’université, BP 12, 76801 Saint Etienne du Rouvray, FranceFrançois JomardGEMAC, Université de Versailles-Saint-Quentin, UMR CNRS 8535, 1 place Aristide Briand, 92125 Meudon, FranceG. PatriarcheCNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, FranceOleg I. LebedevLaboratoire CRISMAT. UMR 6508, CNRS-ENSICAEN, Université de Caen, 6Bd Marechal Juin 14050 Caen, France
2011en
ABI
Аннотация
by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
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