Fullerene-containing C60-CdTe(CdSe) composite nanostructures

We have developed a technology for obtaining homogeneous films based on fullerene-containing C60-CdTe and C60-CdSe composites. The surface morphology of the initial films is characterized by an average lateral roughness size of about 150 nm. Annealing in a vacuum of 10−5 Torr for 3 h showed that C60-CdSe films are stable at temperatures up to T=180°C, while the same treatment of films of the (C60)1−x (CdTe)x system with x<0.5 leads to the appearance of surface clusters of the semiconductor component with an average size of about 500 nm. The cluster density and size increase with the content of CdTe in the initial composite powder. The photoluminescence spectrum of a (C60)1−x (CdTe)x film with x=0.5 upon annealing displays a dominating peak at 730 nm, which is indicative of a significant modification of the film structure as a result of this post-growth treatment. It is demonstrated that fullerene-containing composite network nanostructures with a lateral resolution up to 250 nm can be created by direct electron-beam lithography.

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