Статья

High-performance ultraviolet photodetectors based on CdS/CdS:SnS<sub>2</sub>superlattice nanowires

Guangyang GouInstitute of Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR China. [email protected] [email protected]Guozhang DaiHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaChuan QianHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaYufeng LiuSchool of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, PR ChinaYan FuHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaZhenyang TianHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaYinke HeHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaLingan KongHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaJunliang YangHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaJia SunHunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, PR ChinaYongli GaoDepartment of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA

2016en

ABI

Аннотация

CdS heterostructure nanomaterials are attractive for their potential applications in integrated optoelectronic devices. Herein, the high-quality CdS/CdS:SnS2 superlattice nanowires were synthesized through a micro-environmental controlled co-evaporation technique, which shows periodic emission properties and that their structures are periodic and alternating. For the first time, we demonstrate the fabrication of high-performance ultraviolet photodetectors using unique CdS/CdS:SnS2 superlattice nanowires. The optoelectronic properties of the photodetectors were studied and compared to those devices based on pure CdS nanowires. The as-fabricated photodetectors (under 365 nm) based on CdS/CdS:SnS2 superlattice nanowires showed a high photocurrent to dark current ratio of 10(5), a large photoresponsivity of 2.5 × 10(3) A W(-1), a fast response time of 10 ms and an excellent external quantum efficiency of 8.6 × 10(5) at room temperature, which shows better performance than pure CdS nanowires photodetectors. The results indicate that CdS/CdS:SnS2 superlattice nanowires are very promising potential candidates in nanoscale electronic and optoelectronic devices.

Перевод пока недоступен

Идентификаторы

DOI: 10.1039/c6nr02915a

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar