Etching methodologies in <111>-oriented silicon wafers
R.E. OosterbroekTransducers Technology Laboratory Electrical Engineering Department, MESA Research Institute, University of Twente, Enschede, NetherlandsErwin BerenschotTransducers Technology Laboratory Electrical Engineering Department, MESA Research Institute, University of Twente, Enschede, NetherlandsHenri JansenInter University Micro Electronics Center, Leuven, BelgiumA.J. NijdamTransducers Technology Laboratory Electrical Engineering Department, MESA Research Institute, University of Twente, Enschede, NetherlandsG. PandraudBookham Technology Limited, Abingdon, UKAlbert van den BergMiniaturized (BIO) Chemical Analysis Systems Group, Electrical Engineering Department, MESA Research Institute, University of Twente, Enschede, NetherlandsM.C. ElwenspoekTransducers Technology Laboratory Electrical Engineering Department, MESA Research Institute, University of Twente, Enschede, Netherlands
2000en
ABI
Аннотация
New methodologies in anisotropic wet-chemical etching of <111>-oriented silicon, allowing useful process designs combined with smart mask-to-crystal-orientation-alignment are presented in this paper. The described methods yield smooth surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching and wall passivation, structures can be etched at different depths in a wafer. Designs, using the <111>-crystal orientation, supplemented with pictures of fabricated devices, demonstrate the potential of using <111>-oriented wafers in microsystem design.
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