Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. TsaoMaterial, Physical, and Chemical Sciences Center Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1421 USASrabanti ChowdhuryElectrical and Computer Engineering Department University of California Davis 3133 Kemper Hall Davis CA 95616 USAM.A. HollisAdvanced Technology Division MIT Lincoln Laboratory 244 Wood Street Lexington MA 02421‐6426 USADebdeep JenaElectrical and Computer Engineering and Materials Science and Engineering Departments Cornell University 326 Bard Hall Ithaca NY 14853 USAN. M. JohnsonElectronic Materials and Devices Laboratory PARC 3333 Coyote Hill Road Palo Alto CA 94303 USAK. A. JonesSensors and Electron Devices Directorate U.S. Army Research Laboratory 2800 Powder Mill Road Delphi MD 20783 USARobert KaplarMaterial, Physical, and Chemical Sciences Center Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1086 USASiddharth RajanElectrical and Computer Engineering and Materials Science and Engineering Departments Ohio State University 2015 Neil Avenue, 205 Dreese Laboratory Columbus OH 43210 USAChris G. Van de WalleMaterials Department University of California Santa Barbara 2510 Engineering II Santa Barbara CA 93106‐5050 USAE. BellottiElectrical and Computer Engineering Department Boston University 8 St. Mary's Street Room 533 Boston MA 02215 USAC.L. ChuaElectronic Materials and Devices Laboratory PARC 3333 Coyote Hill Road Palo Alto CA 94303 USARamón CollazoMaterials Science and Engineering Department North Carolina State University 911 Partners Way (EBI 219) Raleigh NC 27695 USAMichael E. ColtrinMaterial, Physical, and Chemical Sciences Center Sandia National Laboratories PO Box 5800 Albuquerque NM 87185 USAJames A. CooperElectrical and Computer Engineering Department Purdue University 1205 West State Street West Lafayette IN 47906 USAK. R. EvansKyma Technologies, Inc. 8829 Midway West Rd Raleigh NC 27617 USASamuel GrahamMechanical Engineering Department Georgia Institute of Technology 771 Ferst Drive Atlanta GA 30332 USAT.A. GrotjohnElectrical and Computer Engineering Department Michigan State University 2120 Engineering Building East Lansing MI 48824 USAEric R. HellerMaterials and Manufacturing Directorate Air Force Research Laboratory 3005 Hobson Way WPAFB OH 45433 USAMasataka HigashiwakiGreen ICT Device Advanced Development Center National Institute of Information and Communications Technology 4‐2‐1 Nukui‐Kitamachi Koganei Tokyo 184‐0015 JapanM. Saif IslamElectrical and Computer Engineering Department University of California at Davis 3139 Kemper Hall Davis CA 95616 USAP JuodawlkisQuantum Information and Integrated Nanosystems Group MIT Lincoln Laboratory 244 Wood Street Lexington MA 02421‐6426 USAM. Asif KhanElectrical Engineering Department University of South Carolina 301 Main Street (Swearingen 3A26) Columbia SC 29208 USAAndrew D. KoehlerHigh Power Electronics Branch Naval Research Laboratory 4555 Overlook Ave SW Washington DC 20375 USAJacob H. LeachKyma Technologies, Inc. 8829 Midway West Rd Raleigh NC 27617 USAUmesh K. MishraElectrical and Computer Engineering Department University of California Santa Barbara 2215C Engineering Science Building Santa Barbara CA 93106 USAR. J. NemanichPhysics Department Arizona State University PO Box 871504 Tempe AZ 85287‐1504 USARobert C. N. Pilawa-PodgurskiElectrical and Computer Engineering University of Illinois Urbana‐Champaign 306 North Wright Street (4042 ECE) Urbana, Illinois 61801 USAJames B. ShealyAkoustis Technologies 9805‐H Northcross Center Court Huntersville NC 28078 USAZlatko SitarMaterials Science and Engineering Department North Carolina State University 911 Partners Way (EBI 217) Raleigh NC 27695 USAMarko J. TadjerHigh Power Electronics Branch Naval Research Laboratory 4555 Overlook Ave SW Washington DC 20375 USAArthur F. WitulskiElectrical Engineering Department Vanderbilt University 1025 16th Av. South, Ste. 200 Nashville TN 37235‐1553 USAMichael WrabackSensors and Electron Devices Directorate U.S. Army Research Laboratory 2800 Powder Mill Road Adelphi MD 20783 USAJ. A. SimmonsAdvanced Science and Technology Division Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1421 USA
2017en
ABI
Аннотация
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga 2 O 3 , advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.
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