Работы, цитирующие эту работу

Работ: 3

Работа: Bandgap opening in few-layered monoclinic MoTe2

1. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

   Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

   Статья2D Materials and ApplicationsPhysica B Condensed Matter2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.089796

2. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

   Kamoladdin Saidov, Jamoliddin Razzokov, Odilkhuja Parpiev +4

   СтатьяAdvanced Memory and Neural ComputingNanomaterials2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2023.article.004001

3. Investigation of electrical and optoelectrical efficiency in the fabricated two-dimensional MoTe2 field-effect transistor

   Kamoladdin Saidov, Khojiakbar Foziljonov, Shodiyor Kholmonov +1

   Статья2D Materials and ApplicationsAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009109