Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors
J.E. SmithIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598M. H. BrodskyIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598B. L. CrowderIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598M. I. NathanIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598A. PinczukIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
1971en
ABI
Аннотация
Raman scattering has been studied in the amorphous form of Si and several related, tetrahedrally bonded semiconductors (Ge, GaAs, GaP, InSb). All vibrational modes of the material can take part in the scattering process, and the Raman spectrum is a measure of the density of vibrational states. The amorphous phases are found to have vibrational spectra very similar to the corresponding crystals, reflecting the similarity in short-range order of the two phases.
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